Product Summary

The MIG75Q201H is a TOSHIBA Intelligent Power Module, which is Silicon N Channel IGBT.

Parametrics

MIG75Q201H absolute maximum ratings: (1)Supply voltagel: 900 V at P-N power termina; (2)Collector-emitter voltage: 1200 V; (3)Collector current: 75 A at Tc = 25℃, DC; (4)Forward current: 75 A at Tc = 25℃, DC; (5)Collector power dissipation: 600 W at Tc = 25℃; (6)Junction temperature: 150 ℃.

Features

MIG75Q201H features: (1)Integrates inverter, brake power circuits & control circuits (IGBT drive units, protection units for over-current, under-voltage & over-temperature) in one package; (2)The electrodes are isolated from case.; (3)High speed type IGBT : VCE (sat) = 3.5 V (Max), toff = 2.5 μs (Max), trr = 0.21 μs (Max); (4)Package dimensions : TOSHIBA 2-136A1A.

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MIG75Q201H
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