Product Summary

The BSM50GD120DN2 is an IGBT Power Module.

Parametrics

BSM50GD120DN2 absolute maximum ratings: (1)Collector-emitter voltage:1200V; (2)Collector-gate voltage, RGE = 20 kΩ:1200V; (3)Gate-emitter voltage:±20V; (4)DC collector current: TC = 25 ℃:72A, TC = 80 ℃:50A; (5)Pulsed collector current, tp = 1 ms: TC = 25 ℃:144A, TC = 80 ℃:100A; (6)Power dissipation per IGBT, TC = 25℃:350W; (7)Chip temperature:+150℃; (8)Storage temperature:-55℃ to +150℃.

Features

BSM50GD120DN2 features: (1)Solderable Power module; (2)3-phase full-bridge; (3)Including fast free-wheel diodes; (4)Package with insulated metal base plate.

Diagrams

BSM50GD120DN2 block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
BSM50GD120DN2
BSM50GD120DN2
Infineon Technologies
IGBT Modules 1200V 50A FL BRIDGE
Data Sheet
0-1: $73.12
1-5: $69.46
5-10: $65.80
BSM50GD120DN2E3226
BSM50GD120DN2E3226
Infineon Technologies
IGBT Modules N-CH 1.2KV 50A
Data Sheet
0-6: $69.46
6-10: $65.80
BSM50GD120DN2G
BSM50GD120DN2G
Infineon Technologies
IGBT Modules 1200V 50A 3-PHASE
Data Sheet
0-6: $87.73
6-10: $78.95