Product Summary
The BSM15GD120DN2E is a 1200V IGBT power module.
Parametrics
BSM15GD120DN2E aboslute maximum ratings: (1)Collector-emitter voltage:1200 V; (2)Collector-gate voltage RGE = 20 kΩ:1200V; (3)Gate-emitter voltage VGE:± 20V; (4)DC collector current: TC = 25℃:25A, TC = 80℃:15A; (5)Pulsed collector current, tp = 1 ms:TC = 25℃:50A,TC = 80℃:30A; (6)Power dissipation per IGBT TC = 25℃:145W; (7)Chip temperature:+ 150℃; (8)Storage temperature:-40℃ to + 125℃.
Features
BSM15GD120DN2E features: (1)Power module; (2)3-phase full-bridge; (3)Including fast free-wheel diodes; (4)Package with insulated metal base plate.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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BSM15GD120DN2E3224 |
Infineon Technologies |
IGBT Modules N-CH 1.2KV 25A |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
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BSM100GAL120DLCK |
Infineon Technologies |
IGBT Modules 1200V 100A CHOPPER |
Data Sheet |
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BSM100GAL120DN2 |
Infineon Technologies |
IGBT Modules 1200V 100A CHOPPER |
Data Sheet |
Negotiable |
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BSM100GAR120DN2 |
Infineon Technologies |
IGBT Transistors 1200V 100A DUAL |
Data Sheet |
Negotiable |
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BSM100GB120DLC |
Infineon Technologies |
IGBT Modules 1200V 100A DUAL |
Data Sheet |
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BSM100GB120DLCK |
Infineon Technologies |
IGBT Modules 1200V 100A DUAL |
Data Sheet |
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BSM100GB120DN2 |
Infineon Technologies |
IGBT Modules 1200V 100A DUAL |
Data Sheet |
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