Product Summary
The BSM15GD120DN2E is a 1200V IGBT power module.
Parametrics
BSM15GD120DN2E aboslute maximum ratings: (1)Collector-emitter voltage:1200 V; (2)Collector-gate voltage RGE = 20 kΩ:1200V; (3)Gate-emitter voltage VGE:± 20V; (4)DC collector current: TC = 25℃:25A, TC = 80℃:15A; (5)Pulsed collector current, tp = 1 ms:TC = 25℃:50A,TC = 80℃:30A; (6)Power dissipation per IGBT TC = 25℃:145W; (7)Chip temperature:+ 150℃; (8)Storage temperature:-40℃ to + 125℃.
Features
BSM15GD120DN2E features: (1)Power module; (2)3-phase full-bridge; (3)Including fast free-wheel diodes; (4)Package with insulated metal base plate.
Diagrams

| Image | Part No | Mfg | Description |  | Pricing (USD) | Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|  |  BSM15GD120DN2E3224 |  Infineon Technologies |  IGBT Modules N-CH 1.2KV 25A |  Data Sheet |  
 |  | ||||||||||||
| Image | Part No | Mfg | Description |  | Pricing (USD) | Quantity | ||||||||||||
|  |  BSM100GAL120DLCK |  Infineon Technologies |  IGBT Modules 1200V 100A CHOPPER |  Data Sheet |  
 |  | ||||||||||||
|  |  BSM100GAL120DN2 |  Infineon Technologies |  IGBT Modules 1200V 100A CHOPPER |  Data Sheet |  Negotiable |  | ||||||||||||
|  |  BSM100GAR120DN2 |  Infineon Technologies |  IGBT Transistors 1200V 100A DUAL |  Data Sheet |  Negotiable |  | ||||||||||||
|  |  BSM100GB120DLC |  Infineon Technologies |  IGBT Modules 1200V 100A DUAL |  Data Sheet |  
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|  |  BSM100GB120DLCK |  Infineon Technologies |  IGBT Modules 1200V 100A DUAL |  Data Sheet |  
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|  |  BSM100GB120DN2 |  Infineon Technologies |  IGBT Modules 1200V 100A DUAL |  Data Sheet |  
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 (China (Mainland))
 (China (Mainland)) 
                         
                        
 
                                    




