Product Summary

The KSB13060 is a NPN Silicon Power Transistor.

Parametrics

KSB13060 absolute maximum ratings: (1)Collector-Base Voltage: 700 V; (2)Collector-Emitter Voltage: 700 V; (3)Collector Emitter Voltage: 400 V; (4)Emitter-Base Voltage: 9 A; (5)Collector Current: 0.8 A; (6)Collector Dissipation: 1.0 W; (7)Storage Temperature: -65 to 150 ℃; (8)Max. Operating Junction Temperature: 150 ℃.

Features

KSB13060 features: (1)High Voltage, High Speed Switching; (2)Suitable for Switching regulator, Inverters motor controls; (3)150℃ Max Operating temperature; (4)8KV ESD proof at HBM (C=100pF, R=1.5kΩ).

Diagrams

KSB1015
KSB1015
Other

Data Sheet
Negotiable 
KSB1015O
KSB1015O
Fairchild Semiconductor
Transistors Bipolar (BJT) PNP Epitaxial Sil
Data Sheet
Negotiable 
KSB1015OTU
KSB1015OTU
Fairchild Semiconductor
Transistors Bipolar (BJT) PNP Epitaxial Sil
Data Sheet
0-1: $2.13
1-25: $1.87
25-100: $1.55
100-250: $1.12
KSB1015YTU
KSB1015YTU
Fairchild Semiconductor
Transistors Bipolar (BJT) PNP Epitaxial Sil
Data Sheet
0-1: $0.35
1-25: $0.30
25-100: $0.22
100-250: $0.19
KSB1017
KSB1017
Other

Data Sheet
Negotiable 
KSB1017OTU
KSB1017OTU
Fairchild Semiconductor
Transistors Bipolar (BJT) DISC BY MFG 2/02
Data Sheet
Negotiable