(China (Mainland))
Product Summary
The KSB13060 is a NPN Silicon Power Transistor.
Parametrics
KSB13060 absolute maximum ratings: (1)Collector-Base Voltage: 700 V; (2)Collector-Emitter Voltage: 700 V; (3)Collector Emitter Voltage: 400 V; (4)Emitter-Base Voltage: 9 A; (5)Collector Current: 0.8 A; (6)Collector Dissipation: 1.0 W; (7)Storage Temperature: -65 to 150 ℃; (8)Max. Operating Junction Temperature: 150 ℃.
Features
KSB13060 features: (1)High Voltage, High Speed Switching; (2)Suitable for Switching regulator, Inverters motor controls; (3)150℃ Max Operating temperature; (4)8KV ESD proof at HBM (C=100pF, R=1.5kΩ).
Diagrams
 |
 KSB1015O |
Fairchild Semiconductor |
Transistors Bipolar (BJT) PNP Epitaxial Sil |
Data Sheet |
Negotiable |
|
||||||||||||
|
KSB1015OTU |
Fairchild Semiconductor |
Transistors Bipolar (BJT) PNP Epitaxial Sil |
Data Sheet |
|
|
||||||||||||
|
KSB1015Y |
Fairchild Semiconductor |
Transistors Bipolar (BJT) PNP Epitaxial Sil |
Data Sheet |
Negotiable |
|
||||||||||||
|
KSB1015YTU |
Fairchild Semiconductor |
Transistors Bipolar (BJT) PNP Epitaxial Sil |
Data Sheet |
|
|
||||||||||||
|
KSB1017OTU |
Fairchild Semiconductor |
Transistors Bipolar (BJT) DISC BY MFG 2/02 |
Data Sheet |
Negotiable |
|
||||||||||||
|
KSB1017RTU |
Fairchild Semiconductor |
Transistors Bipolar (BJT) DISC BY MFG 2/02 |
Data Sheet |
Negotiable |
|
||||||||||||
