(China (Mainland))
Product Summary
The FP50R12KE3 is a IGBT-Module.
Parametrics
Maximum rated values for diode rectifier: (1)repetitive peak reverse voltage, VRRM: 1600 V; (2)maximum RMS current at Rectifier output, IRMSmax: t.b.d. A; (3)DC forward current at TC = 80℃, Id: 50 A; (4)surge forward current at tP = 10 ms, Tvj = 150℃, IFSM: 400 A; (5)I2t - value at tP = 10 ms, Tvj = 150℃, I2t: 800 A2s.
Features
Characteristic values for diode rectifier: (1)forward voltage at Tvj = 150℃, IF = 50 A, VF: 1,05 V typ; (2)threshold voltage at Tvj = 150℃, V(TO): 0,8 V max; (3)slope resistance at Tvj = 150℃, rT: 6,5 mΩ max; (4)reverse current at Tvj = 150℃, VR = 1600 V, IR: 3 mA typ; (5)lead resistance, terminals-chip at TC = 25℃, RAA+CC: 4 mΩ typ.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 FP50R12KE3 |
Infineon Technologies |
IGBT Modules 1200V 50A PIM |
Data Sheet |
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