(China (Mainland))
Product Summary
The MG200M1UK1 is a silicon NPN triple diffused type GTR module. It is suitable for high power switching applicaitons and motor control applications.
Parametrics
MG200M1UK1 absolute maximum ratings: (1)collector-base voltage, VCBO: 1000V; (2)collector-emitter sustaining voltage, VCEX(SUS): 1000V; VCEO(SUS): 880V; (3)emitter-base voltage, VEBO: 7V; (4)collector current, DC, IC: 200A; 1ms, ICP: 400A; (5)forward current, DC, IF: 200A; 1ms, IFM: 400A; (6)base current, IB: 20A; (7)collector power dissipation, PC: 1400W; (8)junction temperature, Tj: 150℃; (9)storage tempeature, Tstg: -40 to 125℃; (10)isolation voltage, Visol: 2500V; (11)screw torque: 20kgcm.
Features
MG200M1UK1 features: (1)the collector is isolated from case; (2)with built-in free wheeling diode; (3)high DC current gain: hFE=100 (min) (IC=200A); (4)low saturation voltage: VCE(sat)=2.5V (max) (IC=200A); (5)excellent collector balance by direct; (6)parallel connection of each all terminals.
Diagrams
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MG2001 |
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MG2002 |
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MG2004 |
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MG200J6ES60 |
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MG200J6ES61 |
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IGBT MOD CMPCT 600V 200A |
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