Product Summary

The FZ1200R16KF4 is an IGBT-Module.

Parametrics

FZ1200R16KF4 absolute maximum ratings: (1)collector-emitter voltage, VCES: 1600V; (2)DC-collector current, IC: 1200A; (3)repetitive peak collector current, ICRM: 2400A when tp=1ms; (4)gate-emitter peak voltage, VGE: ±20V; (5)DC forward current, IF: 1200A; (6)repetitive peak frow current, IFRM: 2400A when tp=1ms.

Features

FZ1200R16KF4 features: (1)thermal resistance, junction to case Transistor / transistor, DC RthJC: 0,016 ℃/W; Diode /diode, DC: 0,04 ℃/W; (2)thermal resistance, case to heatsink pro Module / per Module RthCK: 0,008 ℃/W; (3)max. junction temperature, tvj max: 150 ℃; (4)operating temperature, tc op: -40 to+125 ℃; (5)Lagertemperatur storage temperature tstg -40 to+125 ℃.

Diagrams

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
FZ1200R16KF4
FZ1200R16KF4

Infineon Technologies

IGBT Modules 1600V 1200A SINGLE

Data Sheet

0-2: $560.29
2-3: $527.33
3-5: $494.38
5-10: $461.42
FZ1200R16KF4S1
FZ1200R16KF4S1

Infineon Technologies

IGBT Modules 1600V 1200A SINGLE

Data Sheet

Negotiable