(China (Mainland))
Product Summary
The FZ1200R16KF4 is an IGBT-Module.
Parametrics
FZ1200R16KF4 absolute maximum ratings: (1)collector-emitter voltage, VCES: 1600V; (2)DC-collector current, IC: 1200A; (3)repetitive peak collector current, ICRM: 2400A when tp=1ms; (4)gate-emitter peak voltage, VGE: ±20V; (5)DC forward current, IF: 1200A; (6)repetitive peak frow current, IFRM: 2400A when tp=1ms.
Features
FZ1200R16KF4 features: (1)thermal resistance, junction to case Transistor / transistor, DC RthJC: 0,016 ℃/W; Diode /diode, DC: 0,04 ℃/W; (2)thermal resistance, case to heatsink pro Module / per Module RthCK: 0,008 ℃/W; (3)max. junction temperature, tvj max: 150 ℃; (4)operating temperature, tc op: -40 to+125 ℃; (5)Lagertemperatur storage temperature tstg -40 to+125 ℃.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 FZ1200R16KF4 |
Infineon Technologies |
IGBT Modules 1600V 1200A SINGLE |
Data Sheet |
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FZ1200R16KF4S1 |
Infineon Technologies |
IGBT Modules 1600V 1200A SINGLE |
Data Sheet |
Negotiable |
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