(China (Mainland))
Product Summary
The BSM25GD120DN2 is a 3-phase full-bridge IGBT Power Module.
Parametrics
BSM25GD120DN2 absolute maximum ratings: (1)Collector-emitter voltage:1200 V; (2)Collector-gate voltage RGE = 20 kΩ:1200V; (3)Gate-emitter voltage:± 20V; (4)Power dissipation per IGBT TC = 25℃:200W; (5)Chip temperature:+150℃; (6)Storage temperature:-40℃ to +125℃.
Features
BSM25GD120DN2 features: (1)Power module; (2)3-phase full-bridge; (3)Including fast free-wheel diodes; (4)Package with insulated metal base plate.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 BSM25GD120DN2 |
Infineon Technologies |
IGBT Modules 1200V 25A FL BRIDGE |
Data Sheet |
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BSM25GD120DN2E3224 |
Infineon Technologies |
IGBT Modules N-CH 1.2KV 35A |
Data Sheet |
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